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DMP2069UFY4
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ° C
I DSS
I GSS
?
?
?
?
-1.0
±10
μ A
μ A
V DS = -20V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
-0.3
-0.55
-1.0
V
V DS = V GS , I D = -250 μ A
36
54
V GS = -4.5V, I D = -2.5A
Static Drain-Source On-Resistance
R DS (ON)
?
46
69
m ?
V GS = -2.5V, I D = -2.2A
60
90
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
|Y fs |
?
8
?
S
V DS = -5V, I D = -2.5A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C iss
C oss
C rss
R g
?
?
?
?
214
104
25
250
?
?
?
?
pF
pF
pF
?
V DS = -10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Q g
?
9.1
?
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
1.5
1.7
80.4
155.1
688.1
423.8
?
?
?
?
?
?
nC
nC
ns
ns
ns
ns
V GS = -4.5V, V DS = -10V, I D = -4A
V DS = -10V, V GS = -4.5V,
R D = 2.5 Ω , R G = 3.0 Ω
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
V GS = 4.5    V
V GS = 3.5V
V GS = 3.0V
20
V DS = 5V
15
V GS = 2.5V
V GS = 2.0V
15
10
5
V GS = 1.8V
V GS = 1.5V
10
5
T A = 150°C
V GS = 1.2V
T A = 125°C
T A = 85°C
T A = 25°C
0
0
1
2 3 4
5
0
0
T A = -55°C
0.5 1 1.5 2 2.5 3 3.5
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
2 of 6
www.diodes.com
November 2009
? Diodes Incorporated
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